DMP2215L p-channel enhancem ent mode field effect transistor features ? low on-resistance: r ds(on) < 100m ? @ v gs = -4.5v, i d = -2.7a r ds(on) < 215m ? @ v gs = -2.5v, i d = -2.0a ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 1) steady state t a = 25 c t a = 70 c i d -2.7 -2 a pulsed drain current (note 3) i dm 8 a thermal characteristics characteristic symbol value units total power dissipation (note 1) p d 1.08 w thermal resistance, junction to ambient @t a = 25c (note 1) r ja 115 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb. t 5 sec. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. sot-23 top view top view source equivalent circuit gate drain d g s 1 of 2 sales@zpsemi.com www.zpsemi.com
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -800 na v ds = -20v, v gs = 0v on-state drain current i d(on) -6 ? ? a v ds -5v, v gs = -4.5v -3 ? ? v ds -5v, v gs = -2.5v gate-source leakage i gss ? ? 80 na v gs = 12v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) -0.45 ? -1.25 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 80 165 100 215 m v gs = -4.5v, i d = -2.7a v gs = -2.5v, i d = -2.0a forward transfer admittance |y fs | ? 4 ? s v ds = -5v, i d = -2.7a diode forward voltage (note 5) v sd ? ? -1.26 v v gs = 0v, i s = -2.7a dynamic characteristics input capacitance c iss ? 250 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 88 ? pf reverse transfer capacitance c rss ? 58 ? pf gate resistance r g ? 12 16 v gs = 0v, v ds = 0v, f = 1mhz total gate charge q g ? 4.3 5.3 nc v gs = -4.5v, v ds = -10v, i d = -2.7a gate-source charge q g s ? 0.9 ? gate-drain charge q g d ? 2.1 ? notes: 4. short duration pulse test used to minimize self-heating effect. DMP2215L p-channel enhancem ent mode field effect transistor 2 of 2 sales@zpsemi.com www.zpsemi.com
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